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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1273 DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage PARAMETER HAN INC Emitter-base voltage Collector current Collector current-peak Junction temperature Storage temperature Collector-emitter voltage SEM GE Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE -60 -60 -6 -3 -8 30 150 -55~150 ae ae UNIT V V V A A W Open collector Collector power dissipation Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB1273 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-5mA ,RBE= -60 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=-1mA ,IE=0 IE=-1mA ,IC=0 -60 V Emitter-base breakdown voltage -6 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.4 -1.0 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-5V -0.8 -1.0 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 |I A IEBO Emitter cut-off current hFE-1 hFE-2 DC current gain DC current gain ANG CH S 140-280 VEB=-4V; IC=0 -100 |I A IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V 70 COB Output capacitance fT Transition frequency IN R EMIC ES IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz OND 20 TOR UC 280 60 pF 100 MHz hFE-1 Classifications Q 70-140 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1273 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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